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KMID : 1059519960400030167
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Journal of the Korean Chemical Society
1996 Volume.40 No. 3 p.167 ~ p.172
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Preparation of Zn-Doped GaN Film by HVPE Method
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Kim Hyang-Sook
Hwang Jin-Soo
Chong Paul-Joe
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Abstract
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For the preparation of single-crystalline GaN film, heteroepitaxial growth on a sapphire substrate was carried out by halide vapor phase epitaxy(HVPE) method. The resulting GaN films showed n-type conductivity. The insulator type GaN film was made by doping with Zn(acceptor dopant), which showed emission peaks around 2.64 and 2.43 eV. The result of this study indicates that GaN can be obtained in an epitaxial structure of MIS(metal-insulator-semiconductor) junction. The observed data are regarded as fundamental in developing GaN epitaxial films for light emitting devices of hetero-structure type.
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KEYWORD
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